CEB840N
CEB840N is N-Channel MOSFET manufactured by CET.
FEATURES
Type CEP840N CEB840N
VDSS 500V 500V
CEF840N
500V
RDS(ON) 0.85Ω 0.85Ω 0.85Ω
ID @VGS 8A 10V 8A 10V 8A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
D S CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 500
VGS ±30
ID 8 8 e
IDM f
32 32 e
125 40 PD 1.0 0.32
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.0 62.5
3.1...
