CEB84A4
CEB84A4 is N-Channel MOSFET manufactured by CET.
FEATURES
40V, 90A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 40
VGS ±20
Drain Current-Continuous@ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
ID IDM PD
90 62 360 71 0.47
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units V V
A A A W W/ C C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 2.1 62.5
Units C/W C/W
Details are subject to change without notice .
Rev 1. 2010.Oct. http://.cet-mos.
CEP84A4/CEB84A4
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c
Symbol
Test...
