CEBF634 - N-Channel MOSFET

CET

Key Features

Type CEPF634 CEBF634 CEIF634 CEFF634 VDSS 250V 250V 250V 250V RDS(ON) 0.45Ω 0.45Ω 0.45Ω 0.45Ω ID 8.1A 8.1A 8.1A 8.1A d @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

CEBF634 n-channel mosfet by CET - Datasheet Preview

Datasheet Details

Part number	CEBF634
Manufacturer	CET
File Size	87.10 KB
Description	N-Channel MOSFET
Datasheet	CEBF634 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
CEBF630	N-Channel Enhancement Mode Field Effect Transistor	Chino-Excel Technology
CEBF640	N-Channel Enhancement Mode Field Effect Transistor	Chino-Excel Technology
CEBFZ44	N-Channel Enhancement Mode Field Effect Transistor	Chino-Excel Technology
CEB1012	N-Channel Enhancement Mode Field Transistor	Chino-Excel Technology
CEB1012L	N-Channel Enhancement Mode Field Transistor	Chino-Excel Technology

Other Datasheets by CET

Part Number	Description
CEBF630B	N-Channel MOSFET
CEB01N6	N-Channel MOSFET
CEB01N65	N-Channel MOSFET
CEB01N6G	N-Channel MOSFET
CEB02N6	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEPF634 CEBF634 CEIF634 CEFF634 VDSS 250V 250V 250V 250V RDS(ON) 0.45Ω 0.45Ω 0.45Ω 0.45Ω ID 8.1A 8.1A 8.1A 8.1A d @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.