Datasheet4U Logo Datasheet4U.com

CEM2939 - Dual Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • 20V, 6.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 90mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2.

📥 Download Datasheet

Datasheet preview – CEM2939

Datasheet Details

Part number CEM2939
Manufacturer CET
File Size 518.75 KB
Description Dual Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM2939 Datasheet
Additional preview pages of the CEM2939 datasheet.

📁 Similar Datasheet

  • CEM2005 - Dual Enhancement Mode Field Effect Transistor(N and Channel) (Chino-Excel Technology)
  • CEM2030 - N- & P-Channel 20-V MOSFET (VBsemi)
  • CEM2030A - Dual Enhancement Mode Field Effect Transistor(N and P Channel) (Chino-Excel Technology)
  • CEM2163 - P-Channel 20V MOSFET (VBsemi)
  • CEM2187 - Dual P-Channel 20V MOSFET (VBsemi)
  • CEM2539 - N-Channel 20-V MOSFET (VBsemi)
  • CEM-1203 - magnetic buzzer (CUI)
  • CEM1010 - Single N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEM3032 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
  • CEM3252L - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
Other Datasheets by CET
  • CEM2030 - Dual-Channel MOSFET
  • CEM2082 - Dual N-Channel Enhancement Mode Field Effect Transistor
  • CEM2108 - Dual N-Channel Enhancement Mode Field Effect Transistor
  • CEM2108E - Dual N-Channel MOSFET
  • CEM2133 - P-Channel Enhancement Mode Field Effect Transistor
  • CEM2163 - P-Channel MOSFET
  • CEM2182 - N-Channel MOSFET
  • CEM2187 - P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM2939 5 FEATURES 20V, 6.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 90mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 20 P-Channel -20 Units V V A A W C ±12 6.5 20 2.0 -55 to 150 ±12 -4.
Published: |