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CEM3317 - P-Channel Enhancement Mode Field Effect Transistor

Key Features

  • -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. -30V, -4.9A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 876 5 123 4 S1 G1 S2 G2.

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Datasheet Details

Part number CEM3317
Manufacturer CET
File Size 426.23 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM3317 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEM3317 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. -30V, -4.9A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 876 5 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -30 VGS ±20 ID -6.2 IDM -25 Channel 2 -30 ±20 -4.9 -20 Maximum Power Dissipation PD 2.