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N-Channel Enhancement Mode Field Effect Transistor FEATURES
40V, 180A, RDS(ON) = 5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
CEP14A04/CEB14A04
D
D
G
G D S
S CEB SERIES TO-263(DD-PAK)
G
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current
d
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID@ TC = 25 C ID@ TC = 100 C IDM PD EAS IAS TJ,Tstg 40
Units V V A A A W W/ C mJ A C
±20
180 125 720 200 1.
CEP14A04 Datasheet
