Type CEP14P20 CEB14P20 CEF14P20
VDSS -200V -200V
-200V
RDS(ON) 0.36Ω 0.36Ω
0.36Ω
ID -13.5A -13.5A -13.5A d
@VGS -10V -10V
-10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S.
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CEP14P20/CEB14P20
CEF14P20
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP14P20 CEB14P20 CEF14P20
VDSS -200V -200V
-200V
RDS(ON) 0.36Ω 0.36Ω
0.36Ω
ID -13.5A -13.5A -13.5A d
@VGS -10V -10V
-10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263
VDS -200 VGS ±30
ID -13.5 -8.5
IDM e
-54
139 PD
1.
CEP14P20 Datasheet
