The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CEP14G04/CEB14G04
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 140A, RDS(ON) = 3.6mΩ @VGS = 10V. RDS(ON) = 6.5mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS 40
VGS ±20
ID 140 97
IDM 560 100
PD 0.
CEP14G04 Datasheet
