Click to expand full text
CEP20P06/CEB20P06
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -60
Units V V A A W W/ C C
±20
-15 -45 56 0.
CEP20P06 Datasheet
