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CEP21A3 - N-Channel MOSFET

Key Features

  • 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D 4 D G G S G D S S CEP SERIES TO-220 CEB SERIES TO-263(DD-PAK).

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Datasheet Details

Part number CEP21A3
Manufacturer CET
File Size 45.00 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP21A3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP21A3/CEB21A3 Nov. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D 4 D G G S G D S S CEP SERIES TO-220 CEB SERIES TO-263(DD-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C Ć20 20 60 20 43 0.