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CEP20P10 - P-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • -100V, -20A, RDS(ON) =130mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

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Datasheet Details

Part number CEP20P10
Manufacturer CET
File Size 372.75 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEP20P10 Datasheet
Additional preview pages of the CEP20P10 datasheet.

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Full PDF Text Transcription

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CEP20P10/CEB20P10 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -100V, -20A, RDS(ON) =130mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -100 ±20 -20 -80 115 0.
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