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2SC4115 - NPN Silicon Epitaxial Planar Transistor

Key Features

  • ․Low VCE(sat) ․Excellent current gain characteristics 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range.
  • Notes: Single pulse Pw=10ms Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 40 20 6 3 5 300 150 -55 to +150 Unit V V V A(DC) A(Pulse).
  • mW OC OC Page 1 of 3 7/15.

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Datasheet Details

Part number 2SC4115
Manufacturer CHINA BASE
File Size 408.33 KB
Description NPN Silicon Epitaxial Planar Transistor
Datasheet download datasheet 2SC4115 Datasheet

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2SC4115 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ․Low VCE(sat) ․Excellent current gain characteristics 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range *Notes: Single pulse Pw=10ms Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 40 20 6 3 5 300 150 -55 to +150 Unit V V V A(DC) A(Pulse)* mW OC OC Page 1 of 3 7/15/2011 Characteristics at Tamb=25 OC Parameter Symbol Min.