CHINA BASE 2SC4115
NPN Silicon Epitaxial Planar Transistor
| Part No. | 2SC4115 |
|---|---|
| Datasheet | 2SC4115 Download |
| Manufacturer | CHINA BASE |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
․Low VCE(sat) ․Excellent current gain characteristics 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19gABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range *Notes: Single pulse Pw=10ms Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 40 20 6 3 5 300 150 -55 to +150 Unit V V V A(DC) A(Pulse)* mW OC OC Page 1 of 3 7/15/2011 Characteristics at Tamb=25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE=2V, IC=100mA Current Gain Group Q hFE 120 - 270 R hFE 180 - 390 S hFE 270 - 560 Collector Base Breakdown voltage at IC =50 μA Collector Emitte
