2SC4115
2SC4115 is NPN Silicon Epitaxial Planar Transistor manufactured by CHINA BASE.
Features
․Low VCE(sat) ․Excellent current gain characteristics
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current
Power Dissipation Junction Temperature Storage Temperature Range
- Notes: Single pulse Pw=10ms
Symbol VCBO VCEO VEBO
Ptot Tj TS
Value 40 20 6 3 5 300 150
-55 to +150
Unit V V V
A(DC) A(Pulse)- m W OC OC
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7/15/2011
Characteristics at Tamb=25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain at VCE=2V, IC=100m A
Current Gain Group Q h FE
- 270
R h FE
- 390
S h FE
- 560
Collector Base Breakdown voltage at IC =50 μA
Collector...
