CR18N50FA9K - Silicon N-Channel Power MOSFET

CR Micro

General Description

CR18N50F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

Fast Switching.
Low ON Resistance.
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 500 V 18 A 43 W 0.33 Ω.

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CR18N50FA9K silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CR18N50FA9K
Manufacturer	CR Micro
File Size	1.03 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	CR18N50FA9K Datasheet

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Silicon N-Channel Power MOSFET CR18N50F A9K General Description： CR18N50F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 500 V 18 A 43 W 0.33 Ω Applications： Power switch circuit of adaptor and charger.