CRTM125P06LQ Description
华润微电子(重庆)有限公司.
CRTM125P06LQ Key Features
- Uses CRM(CQ) advanced Trench technology
- Extremely low on-resistance RDS(on)
- Excellent QgxRDS(on) product(FOM)
- AEC-Q101 Qualified
- MSL1 up to 260°C peak reflow
CRTM125P06LQ is Trench P-MOSFET manufactured by CR Micro.
| Part Number | Description |
|---|---|
| CRTM019N03L2-G | Silicon N-Channel Power MOSFET |
| CRTM021N04L2-G | Silicon N-Channel Power MOSFET |
| CRTM024N03L2-G | Silicon N-Channel Power MOSFET |
| CRTM025N03L | 30V Trench N-MOSFET |
| CRTM028N03L2P | Silicon N-Channel Power MOSFET |
华润微电子(重庆)有限公司.