CRTM900P10LQ Datasheet | CR Micro

Features - Uses CRM(CQ) advanced Trench technology - Extremely low on-resistance RDS(on) - Excellent Qgx RDS(on) product(FOM) - AEC-Q101 Qualified Applications - Motor control and drive - Battery management - UPS (Uninterrupible Power Supplies) Trench P-MOSFET -100V, 74mΩ, -17A Product Summary -100V RDS(on)@10V typ ID 74mΩ -17A 100% DVDS Tested 100% Avalanche Tested D 5-8 Package Marking and Ordering Information Part # CRTM900P10LQ Marking 900P10LQ Package PDFN5x6 Packing Tape&reel Reel Size N/A Absolute Maximum Ratings Parameter Symbol Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (ID=-30A, Rg=25Ω)[1] VDS ID ID pulse EAS Gate-Source voltage Power dissipation (TC = 25°C) Ptot Operating junction and storage temperature Tj , T stg Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) Tsold Notes:1.EAS was tested at Tj = 25℃, L = 0.5m H, IAS = -30A, Vgs=-10V. Thermal Resistance...