CRXZ60M065G2Z Description
When using MOSFET Body Diode VGSmax = -5V/+22V a2: Max CRXZ60M065G2Z SiC MOSFET 650V, 60mΩ, 37A Symbol RthJC RthJA Value 1.14 40 Unit °C/W Electrical Characteristic (at Tj = 25 °C, unless otherwise specified) Parameter Symbol min.
CRXZ60M065G2Z Key Features
- CRM G2 SIC MOSFET Technology
- High Blocking Voltage with Low On-Resistance
- High Speed Switching with Low Capacitances
- Avalanche Ruggedness
- Fast Reverse Recovery