CS10N40A4R - Silicon N-Channel Power MOSFET

CR Micro

General Description

CS10N40 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 400 V 10 A 100 W 0.44 Ω.
Low ON Resistance(Rdson≤0.55Ω).
Low Gate Charge (Typical Data:23nC).
Low Reverse transfer capacitances(Typical:8pF).
100% Single Pulse avalanche energy Test.

📥 Download Datasheet

CS10N40A4R silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS10N40A4R
Manufacturer	CR Micro
File Size	545.94 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS10N40A4R Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
CS10N50A8R	Silicon N-Channel Power MOSFET	Huajing Microelectronics
CS10N50FA9R	Silicon N-Channel Power MOSFET	Huajing Microelectronics
CS10N60A8HD	Silicon N-Channel Power MOSFET	Huajing Microelectronics
CS10N60A8R	Silicon N-Channel Power MOSFET	Huajing Microelectronics
CS10N60F	N-CHANNEL MOSFET	BLUE ROCKET ELECTRONICS

Other Datasheets by CR Micro

Part Number	Description
CS10N40A8R	Silicon N-Channel Power MOSFET
CS10N40FA9R	Silicon N-Channel Power MOSFET
CS10N045AE-G	Silicon N-Channel Power MOSFET
CS10N06BE-G	Silicon N-Channel Power MOSFET
CS10N15A3	Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Silicon N-Channel Power MOSFET ○R CS10N40 A4R General Description： CS10N40 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features：  Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 400 V 10 A 100 W 0.44 Ω  Low ON Resistance(Rdson≤0.55Ω)  Low Gate Charge (Typical Data:23nC)  Low Reverse transfer capacitances(Typical:8pF)  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.