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CS2N10AS-G - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

performance and enhance the avalanche energy.

suitable for use as a battery protect or in other applications.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤ 220mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free.

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Datasheet preview – CS2N10AS-G

Datasheet Details

Part number CS2N10AS-G
Manufacturer CR Micro
File Size 448.98 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS2N10AS-G Datasheet
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Full PDF Text Transcription

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Silicon N-Channel Power MOSFET ○R CS2N10 AS-G General Description: CS2N10 AS-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a battery protect or in other applications. The package form is SOT-23, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤ 220mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications: LED Drive,Power Switch For adaptor.
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