Datasheet4U Logo Datasheet4U.com

CS2N10AS-G - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

suitable for use as a battery protect or in other applications.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤ 220mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free.

📥 Download Datasheet

Datasheet Details

Part number CS2N10AS-G
Manufacturer CR Micro
File Size 448.98 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS2N10AS-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CS2N100D 1000V N-Channel MOSFET Convert SemiConductor
CS2N100F 1000V N-Channel MOSFET Convert SemiConductor
CS2N100P 1000V N-Channel MOSFET Convert SemiConductor
CS2N100U 1000V N-Channel MOSFET Convert SemiConductor
CS2N60 N-CHANNEL MOSFET LZG

Other Datasheets by CR Micro

Part Number Description
CS2N100A3R Silicon N-Channel Power MOSFET
CS2N100A4R Silicon N-Channel Power MOSFET
CS2N15AE-1 Silicon N-Channel Power MOSFET
CS2N50A4R Silicon N-Channel Power MOSFET
CS2N60A23H Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET ○R CS2N10 AS-G General Description： CS2N10 AS-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a battery protect or in other applications. The package form is SOT-23, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤ 220mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： LED Drive,Power Switch For adaptor.