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Silicon N-Channel Power Trench MOSFET
○R
CS55N06 A4
General Description：
CS55N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.
Features：
l Fast Switching l ESD Improved Capability l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
VDSS ID RDS(ON)Typ
60
V
55
A
10
mΩ
Applications：
Power switch circuit of adaptor and charger.
CS55N06A4 Datasheet
