CS55N06A4 Datasheet | CR Micro

Description ： CS55N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the Ro HS standard. Features ： l Fast Switching l ESD Improved Capability l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID RDS(ON)Typ 10 mΩ Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Operating Junction and Storage Temperature Range Rating 60 55 38 220 ±20 135 69.5 150，- 55 to 150 Units V A A A V m J W ℃ WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2019V01 CS55N06 A4 ○R Electrical Characteristics（TJ= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS IDSS IGSS(F) IGSS(R) Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage VGS=0V,ID=250µA VDS = 60V, VGS= 0V, TJ = 25℃ VDS =48V, VGS= 0V, TJ = 125℃ VGS =+20V VGS =-20V Rating Min. Typ. Max. 60 -- --- -- 1 -- --...