CS55N10A8-G Datasheet | CR Micro

Description ： CS55N10 A8-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ suitable for use as a load switch and PWM applications. The package form is TO-220, which accords with the Ro HS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤15 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. 100 V 68 A 55 A 140 W 12 mΩ Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Rating 100 68 43 272 ±20 295.8 140 1.12 150，- 55 to 150 300 Units V A A A V m J W W/℃ ℃ ℃ WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 202 1V01 CS55N10 A8-G Electrical Characteristics（Tj= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS IDSS IGSS(F) IGSS(R) Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage VGS=0V, ID=250µA VDS =100V, VGS= 0V, Tj = 25℃ VDS =80V, VGS= 0V, Tj = 125℃ VGS=20V VGS =-20V ON Characteristics Symbol Parameter Test Conditions RDS(ON) Drain-to-Source On-Resistance VGS(TH)...