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CS55N10A3 - Silicon N-Channel Power MOSFET

Datasheet Summary

Description

performance and enhance the avalanche energy.

suitable for use as a load switch and PWM applications.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤15 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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Datasheet preview – CS55N10A3

Datasheet Details

Part number CS55N10A3
Manufacturer CR Micro
File Size 503.63 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS55N10A3 Datasheet
Additional preview pages of the CS55N10A3 datasheet.

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Full PDF Text Transcription

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Silicon N-Channel Power MOSFET ○R CS55N10 A3 General Description： CS55N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤15 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
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