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CS55N10AQ3-G - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤15 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free.

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Datasheet Details

Part number CS55N10AQ3-G
Manufacturer CR Micro
File Size 517.42 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS55N10AQ3-G Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET ○R CS55N10 AQ3-G General Description： CS55N10 AQ3-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is PDFN5*6, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤15 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger.