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Silicon N-Channel Power Trench MOSFET
○R
CS55N06 AQ3-G
General Description：
CS55N06 AQ3-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trenchtechnology
which reduce the conduction loss, improve switching performance
and enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and higher efficiency. The package form is PDFN 5×6, which accords with the
RoHS standard.
Features：
l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free
Applications：
Power switch circuit of adaptor and charger.
CS55N06AQ3-G Datasheet
