CS55N06AQ3-G Datasheet | CR Micro

Description ： CS55N06 AQ3-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is PDFN 5×6, which accords with the Ro HS standard. Features ： l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range VDSS ID（Silicon limited current） RDS(ON)Typ Rating 60 55 38 220 ±20 135 69.5 150，- 55 to 150 11 mΩ Units V A A A V m J W ℃ WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2019V01 CS55N06 AQ3-G ○R Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS IDSS IGSS(F) IGSS(R) Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage VGS=0V,ID=250µA VDS = 60V, VGS= 0V, Ta = 25℃ VDS =48V, VGS= 0V, Ta = 125℃ VGS =+20V VGS =-20V ON Characteristics Symbol...