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Silicon N-Channel Power MOSFET
○R
CS5N10 AE-G-1
General Description：
CS5N10 AE-G-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching
VDSS ID PD RDS(ON)Typ
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is SOP-8, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤67 mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Applications：
Power switch circuit of adaptor and charger.
100 V 4.4 A 2.
CS5N10AE-G-1 Datasheet
