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CMPA0060002F - GaN MMIC Power Amplifier

General Description

Notes 1 The CMPA0060002F is connected to the PCB with 2.0 mil Au bond wires.

2 An external bias T is required.

Copyright © 2009-2015 Cree, Inc.

Key Features

  • 17 dB Small Signal Gain.
  • 3 W Typical PSAT.
  • Operation up to 28 V.
  • High Breakdown Voltage.
  • High Temperature Operation.
  • 0.5” x 0.5” total product size.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink. PaPckNa:gCeMTPyApe0:076800000129F Typical Performance Over 20 MHz - 6.