Datasheet4U Logo Datasheet4U.com

CMPA0060002F - GaN MMIC Power Amplifier

Datasheet Summary

Description

Notes 1 The CMPA0060002F is connected to the PCB with 2.0 mil Au bond wires.

2 An external bias T is required.

Copyright © 2009-2015 Cree, Inc.

Features

  • 17 dB Small Signal Gain.
  • 3 W Typical PSAT.
  • Operation up to 28 V.
  • High Breakdown Voltage.
  • High Temperature Operation.
  • 0.5” x 0.5” total product size.

📥 Download Datasheet

Datasheet preview – CMPA0060002F

Datasheet Details

Part number CMPA0060002F
Manufacturer CREE
File Size 730.90 KB
Description GaN MMIC Power Amplifier
Datasheet download datasheet CMPA0060002F Datasheet
Additional preview pages of the CMPA0060002F datasheet.

📁 Similar Datasheet

Other Datasheets by CREE

Full PDF Text Transcription

Click to expand full text
CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink. PaPckNa:gCeMTPyApe0:076800000129F Typical Performance Over 20 MHz - 6.
Published: |