CMPA0060002F1 Datasheet | Wolfspeed

2 W, DC - 6.0 GHz, Ga N MMIC Power Amplifier Description Wolfspeed’s CMPA0060002F1 is a gallium nitride (Ga N) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). Ga N has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. Ga N HEMTs also offer greater power density and wider bandwidths pared to Si and Ga As transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink. PN: CMPA0060002F1 Package Type: 440219 Typical Performance Over 20 MHz - 6.0 GHz (TC = 25ºC) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Small Signal Gain Saturated Output Power, PSAT1 Power Gain @ PSAT1 PAE @ PSAT1 Units d B W d B % Note1 PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 m A Note2 VDD = 28 V, IDQ = 100 m A Features Applications - 18 d B Small Signal Gain - Ultra Broadband Amplifiers - 4.8 W Typical PSAT - Fiber Drivers - Operation up to 28 V - Test Instrumentation - High Breakdown Voltage - EMC Amplifier Drivers - High Temperature Operation - 0.5” x 0.5” Total Product Size Rev. 1.0, 2022-8-26 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without...