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CMPA0060002F - GaN MMIC Power Amplifier

Datasheet Summary

Description

Wolfspeed’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

Features

  • 17 dB Small Signal Gain.
  • 3 W Typical PSAT.
  • Operation up to 28 V.
  • High Breakdown Voltage.
  • High Temperature Operation.
  • 0.5” x 0.5” total product size.

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Datasheet Details

Part number CMPA0060002F
Manufacturer Wolfspeed
File Size 2.21 MB
Description GaN MMIC Power Amplifier
Datasheet download datasheet CMPA0060002F Datasheet
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CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Description Wolfspeed’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink. PN: CMPA0060002F Package Type: 780019 Typical Performance Over 20 MHz - 6.
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