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CMPA0060002D - GaN HEMT MMIC Power Amplifier

Datasheet Summary

Description

Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

Features

  • 17 dB Small Signal Gain.
  • 2 W Typical PSAT.
  • Operation up to 28 V.
  • High Breakdown Voltage.
  • High Temperature Operation.
  • Size 0.169 x 0.066 x 0.004 inches.

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Datasheet Details

Part number CMPA0060002D
Manufacturer Wolfspeed
File Size 0.98 MB
Description GaN HEMT MMIC Power Amplifier
Datasheet download datasheet CMPA0060002D Datasheet
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CMPA0060002D 2 W, 0.2 - 6.0 GHz, GaN HEMT MMIC Power Amplifier Description Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint. PN: CMPA0060025D Typical Performance Over 0.5 - 6.
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