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CMPA0060002D - GaN HEMT MMIC Power Amplifier

General Description

Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

Key Features

  • 17 dB Small Signal Gain.
  • 2 W Typical PSAT.
  • Operation up to 28 V.
  • High Breakdown Voltage.
  • High Temperature Operation.
  • Size 0.169 x 0.066 x 0.004 inches.

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Full PDF Text Transcription (Reference)

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CMPA0060002D 2 W, 0.2 - 6.0 GHz, GaN HEMT MMIC Power Amplifier Description Wolfspeed’s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint. PN: CMPA0060025D Typical Performance Over 0.5 - 6.