CPM2-1700-0045B Description
VDS CPM2-1700-0045B Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) N-Channel Enhancement Mode.
CPM2-1700-0045B Key Features
- High Blocking Voltage with Low On-Resistance
- High Speed Switching with Low Capacitances
- Easy to Parallel and Simple to Drive
- Avalanche Ruggedness
- Resistant to Latch-Up
- Halogen Free, RoHS pliant
- Higher System Efficiency
- Reduced Cooling Requirements
- Increased Power Density
- Increased System Switching Frequencyy