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CPM2-1700-0045B - Silicon Carbide Power MOSFET

Key Features

  • Chip Outline.
  • High Blocking Voltage with Low On-Resistance.
  • High Speed Switching with Low Capacitances.
  • Easy to Parallel and Simple to Drive.
  • Avalanche Ruggedness.
  • Resistant to Latch-Up.
  • Halogen Free, RoHS Compliant Benefits.
  • Higher System Efficiency.
  • Reduced Cooling Requirements.
  • Increased Power Density.
  • Increased System Switching Frequencyy 1700 V 72 A 45 mΩ.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDS CPM2-1700-0045B Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) N-Channel Enhancement Mode Features Chip Outline • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequencyy 1700 V 72 A 45 mΩ Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Motor Drive • Pulsed Power Applications Part Number CPM2-1700-0045B Die Size (mm) 4.08 x 7.