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CPM2-1200-0160B - Silicon Carbide Power MOSFET

Key Features

  • Package ID @ 25˚C 17.7 A RDS(on) 160 mΩ N-Channel Enhancement Mode.
  • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Benefits.
  • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDS 1200 V CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 25˚C 17.7 A RDS(on) 160 mΩ N-Channel Enhancement Mode • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Benefits • • • Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications • • • • Auxiliary Power Supplies Solar Inverters High Voltage DC/DC Converters PFC Boost Circuits Part Number CPM2-1200-0160B Package Die Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 17.