• Part: CPM2-1200-0160B
  • Description: Silicon Carbide Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cree
  • Size: 425.02 KB
Download CPM2-1200-0160B Datasheet PDF
Cree
CPM2-1200-0160B
CPM2-1200-0160B is Silicon Carbide Power MOSFET manufactured by Cree.
Features Package ID @ 25˚C 17.7 A RDS(on) 160 mΩ N-Channel Enhancement Mode - - - - High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Benefits - - - Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications - - - - Auxiliary Power Supplies Solar Inverters High Voltage DC/DC Converters PFC Boost Circuits Part Number Package Die Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 17.7 11 45 -10/+25 -55 to +150 260 325 Unit Test Conditions VGS@20 V, TC = 25˚C VGS@20 V, TC = 100˚C Note Note 1 IDS (DC) IDS (pulse) Pulsed Drain Current VGS TJ , Tstg TL TPROC Gate Source Voltage Operating Junction and Storage Temperature Solder Temperature Maximum Processing Temperature A V ˚C ˚C ˚C Pulse width t P = 50 μs duty limited by Tjmax, TC = 25˚C 10min Maximum Note 1: Assumes a RθJC < 0.90 K/W f CPM2-1200-0160B Rev. Free Datasheet http://.n Datasheet. Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter...