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CPMF-1200-S080B - Silicon Carbide MOSFET

Datasheet Summary

Features

  • MOSFET Package VDS RDS(on) Qg = 1200 V = 80 mΩ = 90.8 nC.
  • Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G D D Benefits.
  • Higher System Efficiency Reduced Cooling Requirements Avalanche Ruggedness Increase System Switching Frequency DIE S S Part Number CPMF-1200-S080B Package DIE.

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Datasheet Details

Part number CPMF-1200-S080B
Manufacturer CREE
File Size 1.05 MB
Description Silicon Carbide MOSFET
Datasheet download datasheet CPMF-1200-S080B Datasheet
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www.DataSheet.co.kr CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die Features MOSFET Package VDS RDS(on) Qg = 1200 V = 80 mΩ = 90.8 nC • • • • • Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G D D Benefits • • • • Higher System Efficiency Reduced Cooling Requirements Avalanche Ruggedness Increase System Switching Frequency DIE S S Part Number CPMF-1200-S080B Package DIE Applications • • • Solar Inverters Motor Drives Military and Aerospace Maximum Ratings Symbol Parameter Continuous Drain Current Value 46 25.9 85 2.2 1.
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