CTH4106NS-T52 - N-Channel MOSFET

Datasheet Summary

Description

The CTH4106NS

T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications .

Notebook High side switching Power Management Package Outline Drain Gate

Features

Drain-Source Breakdown Voltage VDSS = 60V.
Drain-Source On-Resistance RDS(ON) 16m, at VGS= 10V, ID= 50A.
Continuous Drain Current at TC=25℃ID = 41A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

CT Micro

📥 Download Datasheet

Datasheet Details

Part number	CTH4106NS-T52
Manufacturer	CT Micro
File Size	1.04 MB
Description	N-Channel MOSFET
Datasheet	CTH4106NS-T52 Datasheet
Additional preview pages of the CTH4106NS-T52 datasheet.

📁 Similar Datasheet

CTHF2422 - Common Chokes (Central Technologies)
CTHF2430 - Common Chokes (Central Technologies)
CTHF2826 - Common Chokes (Central Technologies)
CTHF2836 - Common Chokes (Central Technologies)
CTHF2836F - Common Chokes (Central Technologies)
CTHFW2918F - SMD High Current Power Inductor (Central Technologies)

Other Datasheets by CT Micro

CTH10003NS-T52 - N-Channel MOSFET
CTH11055NS - N-Channel MOSFET
CTH1606NS-T52 - N-Channel MOSFET
CTH1706PS-T52 - P-Channel MOSFET
CTH1804PS-T52 - P-Channel MOSFET
CTH214 - Phototransistor Optocoupler
CTH217 - Phototransistor Optocoupler
CTH217A - Phototransistor Optocoupler

Full PDF Text Transcription

Click to expand full text

CTH4106NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS = 60V  Drain-Source On-Resistance RDS(ON) 16m, at VGS= 10V, ID= 50A  Continuous Drain Current at TC=25℃ID = 41A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH4106NS –T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications .

Published: May 20, 2020 |