CTH4106NS-T52 Datasheet | CT Micro

CTH4106NS-T52 N-Channel Enhancement MOSFET Features - Drain-Source Breakdown Voltage VDSS = 60V - Drain-Source On-Resistance RDS(ON) 16m, at VGS= 10V, ID= 50A - Continuous Drain Current at TC=25℃ID = 41A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Description The CTH4106NS - T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications . Applications - Notebook - High side switching - Power Management Package Outline Drain Gate Source Schematic Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTH4106NS-T52 N-Channel Enhancement...