CTH6106PS-T52 Datasheet | CT Micro

CTH6106PS-T52 P-Channel Enhancement MOSFET Features - Drain-Source Breakdown Voltage VDSS -60 V - Drain-Source On-Resistance RDS(ON) 14m, at VGS= -10V, IDS= -17A RDS(ON) 16m, at VGS= -4.5V, IDS= -14A - Continuous Drain Current at TC=25℃ ID = -61A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Applications - Load Switch - Power Management - LCD Display inverter - DC/DC Converter Description The CTH6106PS-T52 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTH6106PS-T52 P-Channel Enhancement...