CTL0203PS-R3 Datasheet | CT Micro

CTL0203PS-R3 P-Channel Enhancement MOSFET Features - Drain-Source Breakdown Voltage VDSS -30 V - Drain-Source On-Resistance RDS(ON) 160mΩ, at VGS= -4.5V, ID= -1.6A RDS(ON) 110mΩ, at VGS= -10V, ID= -2.0A ℃- Continuous Drain Current at TA=25 ID = -2.0A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Description The CTL0203PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management. Applications - Power Management - Portable Equipment - Battery Powered System - Load Switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTL0203PS-R3 P-Channel Enhancement...