CTL0262PS-R3 - P-Channel MOSFET

Product Overview

CT Micro

Part number	CTL0262PS-R3
Manufacturer	CT Micro
File Size	907.25 KB
Description	P-Channel MOSFET
Datasheet	CTL0262PS-R3 Datasheet
Additional preview pages of the CTL0262PS-R3 datasheet.

The CTL0262PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Drain-Source Breakdown Voltage VDSS -20 V.
Drain-Source On-Resistance RDS(ON) 76m, at VGS= -4.5V, ID= -3.4A RDS(ON) 97m, at VGS= -2.5V, ID= -2.4A RDS(ON) 140m, at VGS= -1.8V, ID= -1.7A.
Continuous Drain Current at TC=25℃ID = -3.4A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |