CTL0262PS-R3 - P-Channel MOSFET

Product Overview

CT Micro

Datasheet Details

Part number	CTL0262PS-R3
Manufacturer	CT Micro
File Size	907.25 KB
Description	P-Channel MOSFET
Datasheet	CTL0262PS-R3 Datasheet
Additional preview pages of the CTL0262PS-R3 datasheet.

Product details

Description

The CTL0262PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Power Management Lithium Ion Battery Package Outline Schematic Drain Gate Source Drain Gate Source CT Mic

Features

Drain-Source Breakdown Voltage VDSS -20 V.
Drain-Source On-Resistance RDS(ON) 76m, at VGS= -4.5V, ID= -3.4A RDS(ON) 97m, at VGS= -2.5V, ID= -2.4A RDS(ON) 140m, at VGS= -1.8V, ID= -1.7A.
Continuous Drain Current at TC=25℃ID = -3.4A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |