CT Micro CTL0025NS-R3
The CTL0025NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. The power dissipation is limited by 150 junction temperature.| Part No. | CTL0025NS-R3 |
|---|---|
| Datasheet | CTL0025NS-R3 Download |
| Manufacturer |  CT Micro |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Drain-Source Breakdown Voltage VDSS 50 V● Drain-Source On-Resistance RDS(ON) 1.3Ω, at VGS= 10V, ID= 0.2A RDS(ON) 1.4Ω, at VGS= 5V, ID= 0.2A RDS(ON) 1.6Ω, at VGS= 2.5V, ID= 0.2A ℃● Continuous Drain Current at TA=25 ID = 0.2A
● Advanced high cell density Trench Technology
● RoHS Compliance & Halogen Free
APPLICATIONS
● Switches● Motor controls
● Converters
● Power supply circuits
DESCRIPTION
Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTL0025NS-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA4 Thermal Resistance Junction-Ambient (t=10s) Test Conditions Test Conditions 50 ±20 0.2 1 0.36 -55 to 150 -55 to 150 M...
