Datasheet4U Logo Datasheet4U.com

CTL0036NS-R3 Datasheet N-channel MOSFET

Manufacturer: CT Micro

Overview: CTL0036NS-R3 N-Channel Enhancement MOSFET.

Datasheet Details

Part number CTL0036NS-R3
Manufacturer CT Micro
File Size 457.51 KB
Description N-Channel MOSFET
Datasheet CTL0036NS-R3-CTMicro.pdf

General Description

The CTL0036NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTL0036NS-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings 60 ±20 300 2000 0.35 -55 to 150 -55 to 150 Units V V mA mA W oC oC Notes 1 1 2 Min Typ Max Units Notes - 357 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 2 Jun, 2015 CTL0036NS-R3 N-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters BVDSS Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Test Conditions VGS=0V, ID= 250µA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V Min Typ Max Units Notes 60 - - V - - 1 µA - - ±10 µA On Characteristics Symbol Parameters RDS(ON) Drain-Source On-Resistance VGS(TH) Gate-Source Threshold Voltage Test Conditions VGS = 10V, ID = 500mA VGS = 4.5V, ID = 200mA VGS = VDS,

Key Features

  • Drain-Source Breakdown Voltage VDSS 60 V.
  • Drain-Source On-Resistance RDS(ON) 3.0Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.0Ω, at VGS= 4.5V, IDS= 200mA ℃.
  • Continuous Drain Current at TA=25 , ID = 300mA.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.
  • ESD protection 1.5KV.

CTL0036NS-R3 Distributor