CTL0036NS-R3 Datasheet | CT Micro

CTL0036NS-R3 N-Channel Enhancement MOSFET Features - Drain-Source Breakdown Voltage VDSS 60 V - Drain-Source On-Resistance RDS(ON) 3.0Ω, at VGS= 10V, IDS= 500m A RDS(ON) 4.0Ω, at VGS= 4.5V, IDS= 200m A ℃- Continuous Drain Current at TA=25 , ID = 300m A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free - ESD protection 1.5KV Applications - Cellular phone - Notebook - Power management Package Outline Description The CTL0036NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTL0036NS-R3 N-Channel Enhancement...