CT Micro CTL0036NS-R3
The CTL0036NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. The power dissipation is limited by 150 junction temperature.| Part No. | CTL0036NS-R3 |
|---|---|
| Datasheet | CTL0036NS-R3 Download |
| Manufacturer |  CT Micro |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Drain-Source Breakdown Voltage VDSS 60 V● Drain-Source On-Resistance RDS(ON) 3.0Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.0Ω, at VGS= 4.5V, IDS= 200mA ℃● Continuous Drain Current at TA=25 , ID = 300mA
● Advanced high cell density Trench Technology
● RoHS Compliance & Halogen Free
● ESD protection 1.5KV
APPLICATIONS
● Cellular phone● Notebook
● Power management Package Outline
DESCRIPTION
Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTL0036NS-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings 60 ±20 300 2000 0.35 -55 to 150 -55 to 150 Units V V mA mA W oC oC Notes...
