CT Micro CTL0196PS-R3
The CTL0196PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.| Part No. | CTL0196PS-R3 |
|---|---|
| Datasheet | CTL0196PS-R3 Download |
| Manufacturer |  CT Micro |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Drain-Source Breakdown Voltage VDSS -60 V● Drain-Source On-Resistance RDS(ON) 170mΩ, at VGS= -10V, ID= -1.8A RDS(ON) 200mΩ, at VGS= -4.5V, ID= -1.4A ℃● Continuous Drain Current at TC=25 ID = -1.9A
● Advanced high cell density Trench Technology
● RoHS Compliance & Halogen Free
DESCRIPTION
APPLICATIONS
● Power Management● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTL0196PS-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA4 Thermal Resistance Junction-Ambient (t=10s) Test Conditions Test Conditions -60 ±20 -1.9 -7.6 1.4 -55 to 150 -55 to 150...
