Datasheet Details
| Part number | CTL0196PS-R3 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 763.35 KB |
| Description | P-Channel MOSFET |
| Datasheet | CTL0196PS-R3-CTMicro.pdf |
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Overview: CTL0196PS-R3 P-Channel Enhancement MOSFET.
| Part number | CTL0196PS-R3 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 763.35 KB |
| Description | P-Channel MOSFET |
| Datasheet | CTL0196PS-R3-CTMicro.pdf |
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The CTL0196PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Applications • Power Management • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTL0196PS-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA4 Thermal Resistance Junction-Ambient (t=10s) Test Conditions Test Conditions -60 ±20 -1.9 -7.6 1.4 -55 to 150 -55 to 150 Min Notes V V A1 A1 W2 °C °C Min Typ Max Units Notes -- 90 -- oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 2 Jun, 2015 CTL0196PS-R3 P-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters BVDSS Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Test Conditions VGS= 0V, ID= -250µA VDS = -60V, VGS = 0V VGS = ±20V, VDS = 0V Min Typ Max Units Notes -60 - - V - - -1 µA - - ±100 nA On Characteristics Symbol Parameters RDS(ON) Drain-Source On-Resistance VGS(th) Gate-Source Threshold Voltage Test Conditions VGS = -4.5V, ID = -1.
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