CTL015NS10-R3 - N-Channel MOSFET

Product Overview

CT Micro

Datasheet Details

Part number	CTL015NS10-R3
Manufacturer	CT Micro
File Size	532.95 KB
Description	N-Channel MOSFET
Datasheet	CTL015NS10-R3 Datasheet
Additional preview pages of the CTL015NS10-R3 datasheet.

Product details

Description

The CTL015NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Power Management LCD Display inverter DC/DC Converter Load Switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jun, 2015 CTL015NS10-R3 N

Features

Drain-Source Breakdown Voltage VDSS 105 V.
Drain-Source On-Resistance RDS(ON) 230mΩ, at VGS= 10V, ID= 1.5A RDS(ON) 275mΩ, at VGS= 4.5V, ID= 1.0A ℃.
Continuous Drain Current at TA=25 ID =1.5A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |