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CTL0412ND N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 20 V Drain-Source On-Resistance
RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A
Continuous Drain Current at TC=25℃ID = 4.1A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTL0412ND uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications tions.