Datasheet4U Logo Datasheet4U.com

CTL0412ND - N-Channel MOSFET

Datasheet Summary

Description

The CTL0412ND uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications tions.

Power Management Lithium Ion Battery Package Outline Schematic Pin 1 Pin 2 Gate 1 So

Features

  • Drain-Source Breakdown Voltage VDSS 20 V.
  • Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A.
  • Continuous Drain Current at TC=25℃ID = 4.1A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

📥 Download Datasheet

Datasheet preview – CTL0412ND

Datasheet Details

Part number CTL0412ND
Manufacturer CT Micro
File Size 1.02 MB
Description N-Channel MOSFET
Datasheet download datasheet CTL0412ND Datasheet
Additional preview pages of the CTL0412ND datasheet.
Other Datasheets by CT Micro

Full PDF Text Transcription

Click to expand full text
CTL0412ND N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 20 V  Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A  Continuous Drain Current at TC=25℃ID = 4.1A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTL0412ND uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications tions.
Published: |