CTL0412ND - N-Channel MOSFET

Product Overview

CT Micro

Datasheet Details

Part number	CTL0412ND
Manufacturer	CT Micro
File Size	1.02 MB
Description	N-Channel MOSFET
Datasheet	CTL0412ND Datasheet
Additional preview pages of the CTL0412ND datasheet.

Product details

Description

The CTL0412ND uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications tions. Power Management Lithium Ion Battery Package Outline Schematic Pin 1 Pin 2 Gate 1 Source 2 Gate 2 Drain 1 Source 1 Drain 2 CT Micro Proprietary & Confidential Page 1 Rev 1 Aug, 2013 CTL0412ND N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS

Features

Drain-Source Breakdown Voltage VDSS 20 V.
Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A.
Continuous Drain Current at TC=25℃ID = 4.1A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |