CTL0412ND Key Features
- Drain-Source Breakdown Voltage VDSS 20 V
- Drain-Source On-Resistance
- Continuous Drain Current at TC=25℃ID = 4.1A
- Advanced high cell density Trench Technology
- RoHS pliance & Halogen Free
- Part: CTL0412ND
- Description: N-Channel MOSFET
- Manufacturer: CT Micro
- Size: 1.02 MB
Related CT Micro Datasheets
| Part Number | Description |
|---|---|
| CTL0404NS-R3 | N-Channel MOSFET |
| CTL0422PS-R3 | P-Channel MOSFET |
| CTL0423PS | P-Channel MOSFET |
| CTL0452NS | N-Channel MOSFET |
| CTL0015PS-R3 | P-Channel MOSFET |