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CTL0452NS - N-Channel MOSFET

Datasheet Summary

Description

The CTL0452NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Features

  • Drain-Source Breakdown Voltage VDSS 20 V.
  • Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, IDS= 4.5A RDS(ON) 27m, at VGS= 2.5V, IDS= 4.0A.
  • Continuous Drain Current at TC=25℃ ID = 4.5A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTL0452NS
Manufacturer CT Micro
File Size 813.53 KB
Description N-Channel MOSFET
Datasheet download datasheet CTL0452NS Datasheet
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CTL0452NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 20 V  Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, IDS= 4.5A RDS(ON) 27m, at VGS= 2.5V, IDS= 4.0A  Continuous Drain Current at TC=25℃ ID = 4.5A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL0452NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
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