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CTL0422PS-R3 - P-Channel MOSFET

Datasheet Summary

Description

The CTL0422PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • Drain-Source Breakdown Voltage VDSS -20 V.
  • Drain-Source On-Resistance RDS(ON) 45m, at VGS= -4.5V, ID= -4.0A RDS(ON) 52m, at VGS= -2.5V, ID= -3.0A RDS(ON) 60m, at VGS= -1.8V, ID= -2.0A.
  • Continuous Drain Current at TC=25℃ID = -4.0A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTL0422PS-R3
Manufacturer CT Micro
File Size 898.30 KB
Description P-Channel MOSFET
Datasheet download datasheet CTL0422PS-R3 Datasheet
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CTL0422PS-R3 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -20 V  Drain-Source On-Resistance RDS(ON) 45m, at VGS= -4.5V, ID= -4.0A RDS(ON) 52m, at VGS= -2.5V, ID= -3.0A RDS(ON) 60m, at VGS= -1.8V, ID= -2.0A  Continuous Drain Current at TC=25℃ID = -4.0A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL0422PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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