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MTN2306AM3 - N-Channel MOSFET

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low-voltage drive.
  • Easily designed drive circuits.
  • Pb-free lead plating and halogen-free package Symbol MTN2306AM3 Outline SOT-89 G：Gate S：Source D：Drain GD D S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=100°C Pulsed Drain Current Total Power Dissipation Operating Junction and Stora.

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Datasheet Details

Part number MTN2306AM3
Manufacturer CYStech
File Size 256.78 KB
Description N-Channel MOSFET
Datasheet download datasheet MTN2306AM3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C414M3 Issued Date : 2012.03.29 Revised Date : 2014.07.01 Page No. : 1/8 N-CHANNEL MOSFET MTN2306AM3 BVDSS ID RDSON@VGS=10V, ID=5.8A RDSON@VGS=4.5V, ID=5A 30V 6.8A 25mΩ(typ) 27mΩ(typ) Features • Low on-resistance • High speed switching • Low-voltage drive • Easily designed drive circuits • Pb-free lead plating and halogen-free package Symbol MTN2306AM3 Outline SOT-89 G：Gate S：Source D：Drain GD D S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=100°C Pulsed Drain Current Total Power Dissipation Operating Junction and Storage Temperature Range Symbol VDSS VGSS ID ID IDM PD Tj; Tstg Limits 30 ±12 6.8 4.