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MTN2306N3 - N-Channel Enhancement Mode MOSFET

Key Features

  • Lower gate charge.
  • Pb-free lead plating and Halogen-free package Equivalent Circuit MTN2306N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA=25°C, VGS=10V TA=70°C, VGS=10V ID 4.8 3.8 A Pulsed Drain Current IDM 20 (Note 1 & 2) A Power Dissipation TA=25°C TA=70°C PD 1.38 (Note 3) 0.

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Datasheet Details

Part number MTN2306N3
Manufacturer CYStech
File Size 264.62 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2306N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C723N3 Issued Date : 2012.04.12 Revised Date : Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET MTN2306N3 BVDSS ID RDSON(TYP)@VGS=10V, ID=3.5A RDSON(TYP)@VGS=4.5V, ID=2A 30V 4.8A 35mΩ 58mΩ Features • Lower gate charge • Pb-free lead plating and Halogen-free package Equivalent Circuit MTN2306N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA=25°C, VGS=10V TA=70°C, VGS=10V ID 4.8 3.8 A Pulsed Drain Current IDM 20 (Note 1 & 2) A Power Dissipation TA=25°C TA=70°C PD 1.38 (Note 3) 0.