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MTN2306AN3 - N-Channel Enhancement Mode MOSFET

Key Features

  • Low on-resistance.
  • Low gate charge.
  • Excellent thermal and electrical capabilities.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTN2306AN3 Outline SOT-23 D G:Gate S:Source D:Drain GS Ordering Information Device Package Shipping MTN2306AN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound produc.

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Datasheet Details

Part number MTN2306AN3
Manufacturer CYStech
File Size 356.27 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2306AN3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C429N3 Issued Date : 2008.08.14 Revised Date :2016.01.28 Page No. : 1/ 8 30V N-CHANNEL Enhancement Mode MOSFET MTN2306AN3 BVDSS ID@VGS=4.5V, TA=25°C RDSON@VGS=4.5V, ID=5A RDSON@VGS=2.5V, ID=2.6A 30V 5.