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MTN2306ZN3 - N-Channel Enhancement Mode MOSFET

Key Features

  • VDS=20V RDS(ON)=30mΩ@VGS=4.5V, ID=5A RDS(ON)=40mΩ@VGS=2.5V, ID=2.6A.
  • Low on-resistance.
  • Low gate charge.
  • Excellent thermal and electrical capabilities.
  • Pb-free lead plating package RDSON(MAX) VGS=4.5V, ID=5A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1A 20V 6A 28mΩ 30mΩ 40mΩ 60mΩ Equivalent Circuit MTN2306ZN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain.

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Datasheet Details

Part number MTN2306ZN3
Manufacturer CYStech
File Size 239.46 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTN2306ZN3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C582N3 Issued Date : 2011.08.30 Revised Date : Page No. : 1/ 7 20V N-Channel Logic Level Enhancement Mode MOSFET MTN2306ZN3 BVDSS ID VGS=10V, ID=5A Features • VDS=20V RDS(ON)=30mΩ@VGS=4.5V, ID=5A RDS(ON)=40mΩ@VGS=2.5V, ID=2.6A • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating package RDSON(MAX) VGS=4.5V, ID=5A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1A 20V 6A 28mΩ 30mΩ 40mΩ 60mΩ Equivalent Circuit MTN2306ZN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=70°C, VGS=4.