CMPDM8002A Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR CMPDM8002A is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: C802A FEATURES : - Low r DS(ON) - Low VDS(ON) - Low threshold voltage - Fast switching - Logic level patibility SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA otherwise noted) MIN 50 50 20 280 280 1.5 1.5 350 -65 to +150 357 MAX 100 1.0 500 UNITS V V V m A m A A A m W °C °C/W UNITS n A μA μA m A V V V V V Ω Ω Ω Ω SOT-23 CASE APPLICATIONS: - Load/Power switches - Power supply converter circuits - Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=50V, VGS=0 IDSS VDS=50V, VGS=0, TJ=125°C ID(ON) VGS=10V, VDS=10V BVDSS VGS=0, ID=10μA VGS(th) VDS=VGS, ID=250μA VDS(ON) VGS=10V, ID=500m A VDS(ON) VGS=5.0V, ID=50m A VSD VGS=0, IS=115m A r DS(ON) VGS=10V, ID=500m A r DS(ON) VGS=10V, ID=500m A, TJ=125°C r DS(ON) VGS=5.0V, ID=50m A r DS(ON) VGS=5.0V, ID=50m A, TJ=125°C 500 50 1.0 2.5 1.5 0.15 1.3 2.5 4.0 3.0 5.0 R1 (27-January 2010) .. CMPDM8002A SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET ELECTRICAL SYMBOL g FS Crss Ciss Coss ton, toff CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VDS =10V, ID=200m A 200 VDS=25V, VGS=0, f=1.0MHz 7.0 VDS=25V, VGS=0, f=1.0MHz 70 VDS=25V, VGS=0, f=1.0MHz 15 VDD=30V, VGS=10V, ID=200m A, RG=25Ω, RL=150Ω 20 UNITS m S p F p F p F ns SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: C802A R1 (27-January 2010) w w w. c e n t r a l s e m i . c o...