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CMPDM8002A - SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Description

The CENTRAL SEMICONDUCTOR CMPDM8002A is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

Features

  • Low rDS(ON).
  • Low VDS(ON).
  • Low threshold voltage.
  • Fast switching.
  • Logic level compatibility SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA otherwise noted) MIN 50 50 20 280 280 1.5 1.5 350 -65 to +150 357 MAX 100 1.0 500 UNITS V V V mA mA A A mW °C °C/W UNITS nA μA μA mA V V V V V Ω Ω Ω Ω SOT-23 CASE.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMPDM8002A SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8002A is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: C802A FEATURES: • Low rDS(ON) • Low VDS(ON) • Low threshold voltage • Fast switching • Logic level compatibility SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA otherwise noted) MIN 50 50 20 280 280 1.5 1.5 350 -65 to +150 357 MAX 100 1.
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