CMPDM8120 datasheet by Central Semiconductor.
| Part number | CMPDM8120 |
|---|---|
| Datasheet | CMPDM8120_CentralSemiconductor.pdf |
| File Size | 347.23 KB |
| Manufacturer | Central Semiconductor |
| Description | SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
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The CENTRAL SEMICONDUCTOR CMPDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. C8120 SOT-23 CASE APPLICATIONS:.
View all Central Semiconductor datasheets
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| CMPDM7002A | SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CMPDM7002AG | SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CMPDM7003 | SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CMPDM7120G | SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CMPD2003A | SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE |
| CMPD2004A | SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE |
