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PROCESS CP287
Power Transistor
8.0 Amp NPN Silicon Power Transistor Chip
CentralTM
Semiconductor Corp.
PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization
130 x 130 MILS 9.5 MILS 37 x 20 MILS 38 x 20 MILS Al - 45,000Å Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)
GEOMETRY
GROSS DIE PER 4 INCH WAFER 974
PRINCIPAL DEVICE TYPES MJE13007
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