CPD80V Datasheet | Central Semiconductor

PROCESS Switching Diode High Voltage Switching Diode Chip .. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 16 x 16 MILS 7.1 MILS 6.5 x 6.5 MILS Al - 30,000Å Au-As - 13,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 64,704 PRINCIPAL DEVICE TYPES CMPD2003 CMPD2004 CMPD2005 1N3070 CMDD2004 CMSD2004 CMOD2004 CMXD2004 CMLD2004 BACKSIDE CATHODE R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS Typical Electrical Characteristics R3 (22-March 2010) w w w. c e n t r a l s e m i . c o...